- substrate leakage
- струм втрат через підкладку
English-Ukrainian dictionary of microelectronics. 2013.
English-Ukrainian dictionary of microelectronics. 2013.
substrate leakage current — padėklo nuotėkio srovė statusas T sritis radioelektronika atitikmenys: angl. substrate leakage current vok. Substratleckstrom, m rus. ток утечки через подложку, m pranc. courant de fuite à travers le substrat, m … Radioelektronikos terminų žodynas
Substratleckstrom — padėklo nuotėkio srovė statusas T sritis radioelektronika atitikmenys: angl. substrate leakage current vok. Substratleckstrom, m rus. ток утечки через подложку, m pranc. courant de fuite à travers le substrat, m … Radioelektronikos terminų žodynas
courant de fuite à travers le substrat — padėklo nuotėkio srovė statusas T sritis radioelektronika atitikmenys: angl. substrate leakage current vok. Substratleckstrom, m rus. ток утечки через подложку, m pranc. courant de fuite à travers le substrat, m … Radioelektronikos terminų žodynas
padėklo nuotėkio srovė — statusas T sritis radioelektronika atitikmenys: angl. substrate leakage current vok. Substratleckstrom, m rus. ток утечки через подложку, m pranc. courant de fuite à travers le substrat, m … Radioelektronikos terminų žodynas
ток утечки через подложку — padėklo nuotėkio srovė statusas T sritis radioelektronika atitikmenys: angl. substrate leakage current vok. Substratleckstrom, m rus. ток утечки через подложку, m pranc. courant de fuite à travers le substrat, m … Radioelektronikos terminų žodynas
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
CMOS — For other uses, see CMOS (disambiguation). CMOS inverter (NOT logic gate) Complementary metal–oxide–semiconductor (CMOS) ( … Wikipedia
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
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Threshold voltage — The threshold voltage of a MOSFET is usually defined as the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. The creation of this layer is described next … Wikipedia
Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… … Wikipedia